Photosensitive organic semiconductor compositions

ABSTRACT

The present invention relates to a photosensitive organic semiconductor composition comprising an organic p-type semiconductor pigment with a p-type conducting polymer, wherein the ionization potentials of the organic p-type semiconductor pigment and the p-type conducting polymer are nominally equivalent and a photosensitive organic semiconductor composition comprising an organic n-type semiconductor pigment with an n-type conducting polymer, wherein the electron affinities of the organic semiconductor pigment and the conducting polymer are nominally equivalent. The present invention also relates to a p/n heterojunction utilizing the photosensitive organic semiconductor compositions.

FIELD OF THE INVENTION

The present invention relates to photosensitive organic semiconductorcompositions.

BACKGROUND OF THE INVENTION

There is widespread interest in developing photosensitive organicsemiconductor compositions for use in various optoelectronic devices,including photovoltaics (solar cells) and visible light photodetectors.Such optoelectronic devices typically incorporate a p/n heterojunctionformed at the interface between p-type and n-type semiconducting layers.For organic materials the designation “n-type” indicates the material toexhibit electron accepting character, and as such is considered capableof transporting electrons. The measure of electron accepting characteris usually provided either by the electron affinity or electrochemicalreduction potential of the organic material. A “p-type” organicmaterial, on the other hand, is considered to have electron donatingcharacter and as such is considered to be “hole transporting”. Themeasure of electron donating character is usually provided by theionization potential or electrochemical oxidation potential of theorganic material. The simplest organic p/n heterojunction comprises abilayer formed by the superposition of electron donor and electronacceptor semiconducting organic layers. Multiple organic donor/acceptorlayers can be stacked to give a more complex design. Bulkheterojunctions have also been described, wherein the n-type and p-typeorganic semiconductor materials are blended to yield multipledonor/acceptor interfaces.

A principal feature of the p/n heterojunction is the built-in potentialat the interface between the p-type (donor) material and the n-type(acceptor) material. To a first approximation this built-in potential isthe origin of the rectifying nature, which arises from the differencesin the ionization potentials and electron affinities of the twomaterials which make up the heterojunction. When electrons and holes arephotogenerated in the vicinity of the junction, the field due to thebuilt-in potential serves to separate the charge. The charge separationat the interface is, therefore, the origin of the photovoltaic effect.Such p/n heterojunction diodes can serve as photodiodes and as thefundamental element in a photovoltaic cell, commonly known as a solarcell.

A variety of photoactive organic molecules, crystals, pigments,conjugated and non-conjugated polymers, oligomers, and composites havebeen developed for use as semiconductor donor and acceptor materials forphotovoltaic and photodetector applications. There are severalguidelines in designing or selecting photoactive organic materials forsuch use. First, it is desired that the material have a high opticalabsorption coefficient α (alpha) for incident electromagnetic radiation.For photovoltaic (solar cell) and visible light photodetectorapplications, in particular, it is important for the organic material toexhibit a high optical absorption coefficient for visible and nearinfrared radiation so that very thin layers of the photosensitiveorganic material can be used to absorb nearly all of the incidentradiation. Second, it is desired that the exciton (i.e., the excitedstate electron-hole bound pair) created by the process of lightabsorption by the photosensitive organic material have a long diffusionlength L such that the exciton can migrate through the respective layerand reach the donor/acceptor (p-n) heterojunction before geminaterecombination of quenching occurs. Third, it is desired that uponreaching the interface the exciton disassociates into electrons andholes due to the difference in ionization potential of the donor and theelectron affinity of the acceptor. The latter process can be viewed asan exothermic chemical reaction, i.e., a reaction in which some energyis released as vibrational energy. This reaction occurs because theenergy separation of the dissociated exciton, i.e., the energydifference between the free electron in the acceptor material and thefree hole in the donor is smaller than the energy of the exciton priorto dissociation. Fourth, it is desired that the electron and holescreated upon excition dissociation at the donor/acceptor interface havea high mobility in their respective layers so that they may beseparately collected at opposing contacting electrodes and contribute tothe photocurrent. Lastly, it is desired that the photosensitive organicmaterial be easily processed to form the appropriately thin layers orblends of donor and acceptor component.

Unfortunately, prior art formulations of organic semiconductingmaterials have typically suffered from one or more disadvantages withregards to their optical or electronic materials properties and/or totheir convenience for processing that have significantly restrictedtheir use.

For example, a wide variety of “small” molecule materials and pigmentshave been used to fabricate p/n heterojunctions for photovoltaic andphotodetector applications. References to the use of small molecule andpigment materials include C. W. Tang Appl. Phys. Lett. (1986) 48, 183,Peumans, P.; Yakimov, A.; Forrest, S. J. App. Phys. (2003), 93(7), 3693,Petritsch, K.; Dittmer, J. J.; Marseglia, E. A.; Friend, R. H.; Lux, A.;Rozenberg, G. G.; Moratti, S. C.; Holmes, A. B. Solar Energy Materialsand Solar Cells (2000), 61(1), 63-72, all incorporated herein byreference. Typical of such materials are “electron-donor” copperphthalocyanine (CuPc) and “electron-acceptor”3,4,5,10-perylenetetracarboxylic-bis-benzimidazole (PTCBI). Thin filmsof these materials can be fabricated with thermal evaporation, chemicalvapor deposition (CVD) and so on. Simple donor/acceptor bilayers, aswell as multiple alternating layers of donor and acceptor, can beassembled. However, vacuum sublimation is a batch process, which makesproduction scale runs quite costly, and thin, sublimed films are fragileand susceptible to damage. Alternatively, soluble derivatives of thesematerials can be prepared and dissolved in an appropriate solvent suchthat thin films can be fabricated by casting directly from solution orusing similar fluid phase processing. Unfortunately, the films ofmolecular organic donor or acceptor materials prepared by vacuum orsolution processing methods tend to be amorphous (non-crystalline) and,as such, generally exhibit small exciton diffusion lengths and lowcarrier mobility. Consequently, photovoltaic devices and photodetectorsconstructed from these amorphous materials exhibit relatively lowphoton-electric conversion efficiency (low quantum yield), being on theorder of 2% or less.

Also, a variety of polymeric materials have been used to fabricate p/nheterojunctions for photovoltaic, photodetector, and otheroptoelectronic applications. Photosensitive junctions can be producedusing two semiconducting organic layers in a donor/acceptorheterojunction (i.e., bilayer) structure or alternation layerstructures. Conducting polymers which combine the electronic and opticalproperties of semiconductors and metals with the attractive mechanicalproperties and processing advantages of polymers have been described byA. J. Heeger, S. Kivelson, J. R. Schrieffer, W. P. Su, Review of ModernPhysics 60, 781 (1988), incorporated herein by reference. The ability tocontrol the energy gap and electronegativity through molecular designhas enabled the synthesis of conducting polymers with a range ofionization potentials and electron affinities; See T. A. Skotheim, Ed.,Handbook of Conducting Polymers Vol.-T, X-T (Marcel Dekker, New York1986), J. L. Bredas and R. R. Chance, Eds., Conjugated PolymericMaterials: Opportunities in Electronics, Optoelectronics and MolecularElectronics (Kluwer Academic Press, Netherlands 1990), both incorporatedherein by reference. The active layer can comprise one or moresemiconducting, conjugated polymers, alone or in combination withnon-conjugated materials, one or more organic molecules, or oligomers.The active layer can be a blend of two or more conjugated polymers withsimilar or different electron affinities and different electronic energygaps. The active layer can be a blend of two or more organic moleculeswith similar or different electron affinities and different electronicenergy gaps. The active layer can be a blend of conjugated polymers andorganic molecules with similar or different electron affinities anddifferent energy gaps. The latter offers specific advantages in that thedifferent electron affinities of the components can lead to photoinducedcharge transfer and charge separation; a phenomenon which enhances thephotosensitivity [N. S. Sariciftci and A. J. Heeger, U.S. Pat. No.5,333,183 (Jul. 19, 1994); N. S. Sariciftci and A. J. Heeger, U.S. Pat.No. 5,454,880 (Oct. 3, 1995); N. S. Sariciftci, L. Smilowitz, A. J.Heeger and F. Wudl, Science 258, 1474 (1992); L. Smilowitz, N. S.Sariciftci, R. Wu, C. Gettinger, A. J. Heeger and F. WudI, Phys. Rev. B47, 13835 (1993); N. S. Sariciftci and A. J. Heeger, Intern. J. Mod.Phys. B 8,237 (1994), all incorporated herein by reference]. The activelayer can also be a series of heterojunctions utilizing layers oforganic materials or blends as indicated above.

Typical p-type (donor) semiconducting polymers are poly-3-hexylthiophene(PT) and poly(2-methoxy, 5-(2′-ethyl-hexyloxy) paraphenylenevinylene(MEH-PPV). Other examples of typical semiconducting conjugated polymersinclude, polyacetylene, (“PA”), and its derivatives; polyisothianaphleneand its derivatives; polythiophene, (“PT”), and its derivatives;polypyrrole, (“PPr”), and its derivatives; poly(2,5-thienylenevinylene),(“PTV”), and its derivatives; poly(pphenylene), (“PPP”), and itsderivatives; polyflourene, (“PF”), and its derivatives; poly(phenylenevinylene), (“PPV”), and its derivatives; polycarbazole and itsderivatives; poly(1,6-heptadiyne); polyisothianaphene and itsderivatives; polyquinolene and semiconducting polyanilines (i.e.leucoemeraldine and/or the emeraldine base form). Representativepolyaniline materials are described in U.S. Pat. No. 5,196,144,incorporated herein by reference. Bilayer p/n junction or blended (bulk)p/n heterjunction structures have been produced by layering or blendingthe donor semiconducting polymer with an acceptor material of n-type(acceptor) poly(cyanophenylenevinylene) (“CN—PPV”). Alternativley,fullerene molecules such as C 60 and its functional derivatives (such asPCBM), or organic molecules have been used an acceptor material ofn-type (acceptor). The use of conjugated polymers as photosensitivematerials has been described for example in the following reports: S.Karg, W. Riess, V. Dyakonov, M. Schwoerer, Synth. Metals 54, 427 (1993);H. Antoniadis, B. R. Hsieh, M. A. Abkowitz, S. A. Jenekhe, M. Stolka,Synth. Metals 64, 265 (1994); G. Yu, C. Zhang, A. J. Heeger, Appl. Phys.Lett. 64, 1540 (1994); Friend, R. H. Pure Appi. Chem. (2001) 73,425-430; R. N. Marks, J. J. M. Halls, D. D. D. C. Bradley, R. H. Friend,A. B. Holmes, J. Phys.: Condens. Matter 6, 1379 (1994); A. J. Heeger andG. Yu, U.S. Pat. No. 5,504,323 (April, 1996); R. H. Friend, A. B. Homes,D. D. C. Bradley, R. N. Marks, U.S. Pat. No. 5,523,555 (June, 1996). [G.Yu, H. Pakbaz and A. J. Heeger, Appl. Phys. Lett. 64, 3422 (1994); G.Yu, J. Gao, J. C. Hummelen, F. Wudl and A. J. Heeger, Science 270, 1789(1995); G. Yu and A. J. Heeger, J. Appl. Phys. 78, 4510 (1995)], allincorporated herein by reference. Unfortunately, optoelectronic devicessuch as solar cells and photodetectors constructed using semiconductingpolymers materials exhibit relatively low photon-electric conversionefficiency (low quantum yield).

On the other hand, it is known that the electronic and opticalproperties of organic semiconductors improve with increasing structuralorder. For example the exciton diffusion length L in single crystalnaphthalene and anthracene is reported to be about 200 nm compared toless than 100 nm for many noncrystalline organic molecular films.Powell, R.; Soos, J.; J. Lumin. (1975) 11, 1-45, Meth, J.; Marshall, C.;Fayer, M.; Solid State Commun., (1990) 74, 281-284., Peumans, P.;Yakimov, A.; Forrest. S. J. App. Phys. (2003), 93(7), 3693, allincorporated herein by reference. The performance of amorphous organicsemiconductor films is known to be enhanced by solvent and thermalannealing processes which tend to crystallize organic semiconductormaterials. An enhancement in quantum efficiency has been demonstratedfor example by solvent annealing to produce a crystal network in anorganic solar cell containing a film of n-type (acceptor) perylenebis(phenethylimide) (Dittmer, J. J.; Lazzaroni, R.; Leclere, Ph.;Moretti, P.; Granstrom, M.; Petritsch, K.; Marseglia, E. A.; Friend, R.H.; Bredas, J. L.; Rost, H.; Holmes, A. B.; Solar Energy Materials andSolar Cells (2000), 61(1), 53-61, incorporated herein by reference.)Solvent treatment also improved the crystallinity and photovoltaicproperties of a p-type magnesium phthalocyanine film (Hor, A. M.;Loufty, R. O. Thin Solid Films 1983, 106, 291-301). The excitondiffusion length L in films of n-type (acceptor) perylenebis(phenethylimide) have also been shown to increase uponcrystallization by solvent annealing. (Gregg, B. J. Phys. Chem. (1996)100, 852-859, incorporated herein by reference.) Carrier mobility incrystal networks is also much higher than in amorphous compositions. Forvapor deposited layers Kotani has shown that carrier mobilities arestrongly dependent on the substrate temperature during thevapor-deposition process, wherein high substrate temperature affordedincrease film crystallinity and higher carrier mobilities increasednearly ten-fold (Kotani, T. et. al., In “Proceedings of the EleventhInternational Congress on Advances in Non-Impact Printing Technologies”,M. Hopper, ed., IS&T, Springfield, Va., ;42, 1995). Unfortunately,control over the morphology and extent of crystallization by suchannealing processes is poor. Additionally, such solvent annealingprocesses can lead to formation of unwanted pinholes in the crystallizedlayer.

Organic semiconductor crystals have been successfully formulated for useas photoconductors for electrophotography as described in“Photoreceptors: Organic Photoconductors”, P. Borsenberger, D. Weiss, inHandbook of Imaging Materials, 2^(nd) edition, Diamond and D. Weis, Ed,Marcel Dekker, New York 2002, pp 368-424. Compositions comprisingfinely-divided, crystalline n-type (acceptor) semiconductor pigmentmaterial perylene bis(phenethylimide) dispersed in an inert polymericbinder have been described, for example, by Gruenbaum et al. U.S. Pat.No. 4,968,571, and U.S. Pat. No. 5,019,473 incorporated herein byreference. Also, photoconductor compositions comprising crystalline andco-crystalline mixtures of titanylphthalocyanine semiconductor pigmentmaterials dispersed in an inert (non-conducting) polymeric binder havebeen described by Molaire and Keading U.S. Pat. Nos. 5,614,342 and5,766,810, both incorporated herein by reference. While theseaforementioned dispersions of semiconductor pigment in polymer binderare suitable for electrophotographic applications, these compositionsare not sufficiently sensitive for photovoltaic and low-biasphotodetector applications because the film-forming polymeric binder iselectrically insulative.

For example, the inert polymeric binders used to prepare theelectrophotographic photoconductor dispersions noted above include, forexample, styrene-butadiene copolymers; vinyl toluene-styrene copolymers;styrene-alkyd resins; silicone-alkyd resins; soya-alkyd resins;vinylidene chloride-vinyl chloride copolymers; poly(vinylidenechloride); vinylidene chloride-acrylonitrile copolymers; vinylacetate-vinyl chloride copolymers; poly(vinyl acetals), such aspoly(vinyl butyral); nitrated polystyrene; poly(methylstyrene);isobutylene polymers; polyesters, such aspoly[ethylene-coalkylenebis(alkyleneoxyaryl)phenylenedicarboxylate];phenol formaldehyde resins; ketone resins; polyamides; polycarbonates;polythiocarbonates;poly[ethylene-coisopropylidene-2,2-bis(ethyleneoxyphenylene)-terephthalate];copolymers of vinyl haloacrylates and vinyl acetate such aspoly(vinyl-m-bromobenzoatecovinyl acetate); chlorinated poly(olefins),such as chlorinated poly(ethylene); cellulose derivatives such ascellulose acetate, cellulose acetate butyrate and ethyl cellulose; andpolyimides, such as poly[1,1,3-trimethyl-3-(4′-phenyl)-5-indanepyromellitimide] and others. These polymers are not conjugated, do notcontain an electrochemically active redox component, and as such areelectronically insulating. Thus, as reported by Kitamujra and Yoshimurain: Proceedings of the Eighth International Congress on Advances inNon-Impact Printing Technologies, 1992, E. Hanson ed., IS&T,Springfield, Va., p237, for TiOPc dispersions in a polyester orpolycarbonate, these pigment/polymer compositions exhibit low carriermobility and require large applied electric fields in order to transportcharge through the composition.

There is considerable published literature on photosensitivecompositions that comprise n-type (electron-acceptor) organicsemiconductor, such as C60 and its derivatives, dispersed in a p-type(electron donor) electronically conducting polymer, such aspolythiophene or PPV and their derivatives. There is no prior artdescribing preparation or use of compositions that comprise n-type(electron-acceptor) organic semiconducto crystals dispersed in an n-type(electron donor) electronically conducting polymer. There are a fewreferences; Hong, J.; Chen, H; Wang, M. J. Mater. Sci. 2003, 38, 4021,Nobutsugu, M.; Kanji, S. Kobunshi Ronbunshu 1983, 40, 211-216, Manabu,T.; Satoshi, O.; Hiroyki, T.; Seiko, N.; Hideo, N. Tech. Dig.-Int.Photovoltaic Sci. and Eng. Conf., 1^(st) (1984) pp263-266, Takashi, K.;Akira, K.; Shunji, I. Denshi Shashin Gakkaishi 1984, 23, 18-23, thatrelate to the preparation and use of dispersions of a phthalocyaninespigment in the binder polymer of polyvinylcarbazole (PVK). Although notspecified or demonstrated in these latter references, and althoughphthalocyanine pigments can exhibit n-type or p-type behavior dependingon method of preparation and treatment, it may be considered that thephthalocyanine pigment is p-type in the above cited references and thePVK polymer is an electron donating polymer, hence comprising a p-typepigment dispersed in an electron donating (p-type) polymer. PVK polymerhas a relatively high ionization potential, 5.8 eV as reported byAnderson et al, J. Am. Chem. Soc. (1998), 120, 9646-9655 and Kido, J.;Shionoya, H.; Nagai, K. Appl. Phys. Lett. (1995), 67, 2281, whereas thetypical ionization potential for a metal phthalocyanine is about 4.9 eV[4.8 eV for copper phthalocyanines as reported by Lee. S.; Wang, M.;Hou, X.; Tang, C. Appl. Phys. Lett (1999), 74, 670-672) and 5.03 eV forzinc phthalocyanine as reported by Kimura, T.; Sumimoto, M.; Sakaki, S.;Fujimoto, H.; Hashimoto, Y.; Matsuzaki, S. Chem. Phys. (2000), 253(1),125-131]. Thus, in these cited examples, the ionization potential of thephthalocyanine differs substantially from that of PVK amount (thedifference being greater than 0.5 eV). Hence, carrier (hole) mobilitythrough the composition remains very poor because there is an energeticbarrier (>0.5 eV) for the hole to move from the phthalocyanine to PVK.

PROBLEM TO BE SOLVED

There is a continuing need for photosensitive organic semiconductorcompositions that may be used to produce various optoelectronic devicesincluding photodiodes, photodetectors, and photovoltaic devices (solarcells). Present organic semiconductor compositions for optoelectronicdevice applications such as photodetectors and photovoltaic devices aredeficient in one or more attributes of exciton diffusion length, carriermobility, and optical absorption coefficient.

SUMMARY OF THE INVENTION

The present invention relates to a photosensitive organic semiconductorcomposition comprising at least one organic p-type (electron donor)semiconductor pigment with at least one p-type (electron donor)conducting polymer, wherein the ionization potential of said at leastone organic p-type (electron donor) semiconductor pigment and theionization potential of said at least one p-type (electron donor)conducting polymer are nominally equivalent. The present invention alsorelates to a photosensitive organic semiconductor composition comprisingat least one organic n-type (electron donor) semiconductor pigment withat least one n-type (electron donor) conducting polymer, wherein theelectron affinity of said at least one organic n-type (electron donor)semiconductor pigment and the electron affinity of said at least onen-type (electron donor) conducting polymer are nominally equivalent, aswell as a p/n heterojunction comprising a combination of at least onelayer comprising p-type organic semiconductor pigment with at least onep-type conducting polymer, wherein the ionization potential of said atleast one p-type organic semiconductor pigment and the ionizationpotential of said at least one p-type conducting polymer are nominallyequivalent and at least one layer comprising at least one n-type organicsemiconductor pigment with at least one n-type conducting polymer,wherein the electron affinity of said at least one n-type organicsemiconductor pigment and the electron affinity of said at least onen-type conducting polymer are nominally equivalent.

ADVANTAGEOUS EFFECT OF THE INVENTION

The present invention includes several advantages, not all of which areincorporated in a single embodiment. The specific combination of organicsemiconductor pigment crystals with conducting polymers wherein theionization potential (electron affinity) of the pigment and theionization potential (electron affinity) of the polymer are nominallyequivalent provides for semiconductor compositions with uniqueelectrical, optical, electrochemical, and processing properties. Thep-type (electron donor) photosensitive organic semiconductorpigment/polymer composition and n-type (electron acceptor)photosensitive organic semiconductor pigment/polymer compositions may beformed into bilayers and multilayers and into a blended or bulk p/nheterojunction. The compositions may be in optoelectronic devicesincluding photodiodes, visible spectrum photodetectors, and photovoltaicdevices (solar cells).

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1. Cyclic voltammogram of naphthimide conducting polymer NB-2recorded at a glassy carbon electrode in 3:1 methylene chloride/methanolcontaining 0.1 M tetrabutylammoniumtetrafluoroborate.

FIG. 2. Sizing data for dispersion of UD-1 pigment material innaphthimide conducting polymer NB-2 with a Model UPA-15 (Microtrac)ultrafine particle analyzer.

FIG. 3. UV-vis absorption spectra for spin coated films of UD-1 pigmentmaterial dispersed in naphthimide conducting polymer NB-2. Table 3 listsrotation speed (rpm), film thickness (μm), and film optical density (OD)at 578 nm.

FIG. 4. UV-vis NIR absorption spectra for a 0.347 micron thickspin-coated film of TiOpc pigment material dispersed in tritolylamineconducting polymer T-1

DETAILED DESCRIPTION OF THE INVENTION

This present invention relates to photosensitive organic semiconductorcompositions that comprise a stable dispersion of nanometer-sizedorganic semiconductor pigment crystals in an electronically conductingpolymeric binder. More specifically it relates to photosensitive organicsemiconductor compositions wherein the ionization potential (electronaffinity) of the pigment and the ionization potential (electronaffinity) of the polymer are nominally equivalent. The term “nominallyequivalent” as used herein refers to a difference in ionizationpotential of the pigment and its associated polymer of less than 0.5 eV,or a difference in the electron affinity of the pigment and the electronaffinity of the polymer of less than 0.5 eV. Optimally these differencesare less than 0.2 eV, and most optimum is the condition where thesedifferences are less than 0.1 eV.

Thus described are p-type (electron donor) photosensitive organicsemiconductor compositions that comprise nanometer-sized p-type(electron donor) organic semiconductor pigment crystals with anionization potential IP that are dispersed in an p-type (electron donor)electronically conducting polymeric binder that has a similar ionizationpotential. Likewise, are described n-type (electron acceptor)photosensitive organic semiconductor compositions that comprisenanometer-sized n-type (electron acceptor) organic semiconductor pigmentcrystals with an electron affinity (also referred to herein as EA) thatare dispersed in an n-type (electron acceptor) electronically conductingpolymeric binder that has a similar electron affinity. The specificcombination of organic semiconductor pigment crystals with conductingpolymers wherein the ionization potential (electron affinity) of thepigment and the ionization potential (electron affinity) of the polymerare nominally equivalent provides for semiconductor compositions withunique electrical, optical, electrochemical, and processing properties.

It would be advantageous to prepare photosensitive organic semiconductorcompositions that comprise a stable dispersion of nanometer-sizedorganic semiconductor pigment crystals in an electronically conductingpolymeric binder wherein the polymer binder facilitates the motion ofcharge carriers throughout. In order to maximize carrier transportwithin the composition, it is preferred to prepare the compositionwherein the ionization potential of the pigment (for p-type pigment) andthe ionization potential of the polymer (p-type polymer) are nominallyequivalent. Likewise, to maximize carrier transport within an n-typecomposition the composition would comprise an n-type (electron-acceptor)organic semiconductor dispersed in a n-type (electron acceptor)electronically conducting polymer wherein the electron affinity of thepigment and the electron affinity of the polymer are nominallyequivalent. Such photosensitive organic semiconductor compositions maybe used to produce various optoelectronic devices including photodiodes,photodetectors, and photovoltaic devices (solar cells).

The concept of preparing or use of a composition comprised of an n-type(electron-acceptor) organic semiconductor dispersed in a n-type(electron acceptor) electronically conducting polymer wherein theelectron affinity of the pigment and the electron affinity of thepolymer are nominally equivalent has not been disclosed in the priorart. Likewise, the concept of preparing use of a composition comprisedof a p-type (electron-donor) organic semiconductor in a p-type (electrondonor) electronically conducting polymer wherein the ionizationpotential of the pigment and the ionization potential of the polymer arenominally equivalent has not been disclosed in the prior art. Thespecific use of the organic semiconductor/conducting polymercompositions to prepare p/n heterojunctions for optoelectronicapplications has also not been disclosed in the literature.

This invention also relates to p/n heterojunctions prepared bycombination of the p-type (electron donor) photosensitive organicsemiconductor pigment/polymer composition and the n-type (electronacceptor) photosensitive organic semiconductor pigment/polymercompositions into bilayers and multilayers. This invention also relatesto p/n heterojunctions prepared by combination of the p-type (electrondonor) photosensitive organic semiconductor pigment/polymer compositionand the n-type (electron acceptor) photosensitive organic semiconductorpigment/polymer compositions into a blended or bulk p/n heterojunction.This invention also relates to the use of the p/n heterojunctions ofphotosensitive organic semiconductor pigment/polymer compositions invarious optoelectronic devices including photodiodes, visible spectrumphotodetectors, and photovoltaic devices, such as solar cells.

This invention also utilizes the processing advantages associated withthe fabrication of p/n heterojunction diode structures from a dispersionof nanometer-sized organic semiconductor pigment in a soluble conductingor conjugated polymers (and/or their precursor polymers). The dispersionmay be cast from solution to enable the fabrication of large activeareas.

Photosensitive p-type (electron donor) organic semiconductorcompositions that comprise nanometer-sized p-type (electron donor)organic semiconductor pigment crystals with an ionization potential IPthat are dispersed in an p-type (electron donor) electronicallyconducting polymeric binder that has a similar ionization potential. Ina preferred embodiment the ionization potentials of the electron-donorpigment and electron-donor conducting polymer differ by less than 0.5eV. In a more preferred embodiment the ionization potentials of thepigment and conducting polymer differ by less than 0.2 eV. In a mostpreferred embodiment the ionization potentials of the pigment andconducting polymer differ by less than 0.1 eV.

Any p-type semiconducting organic pigment may be utilized. Mostpreferred are those that exhibit high absorption for visible and nearinfrared radiation. Representative examples of p-type semiconductingpigment include the substituted and unsubstituted metal-freephthalocyanines, substituted and unsubstituted metallophthalocyanines,and porphyrins, among others. The class of p-type pigment materials thatis most useful in the aforementioned composition is themetallophthalocyanines.

Preferred p-type semiconducting pigment materials are those that can beprepared or processed to form nanometer-sized crystals for dispersioninto the polymer. Preferred particle sizes are less than 0.5 micron inlength. More preferred particle sizes are less than 0.2 micron inlength. Preferred particle sizes are less than 0.1 micron in length.

Acceptable procedures for processing p-type semiconducting pigmentmaterials to form nanometer-sized crystal dispersions includedry-milling, salt-milling, acid-pasting, and solvent milling, amongothers. The optimum ratio of pigment material to conducting polymericbinder may vary widely depending upon the particular materials employed.The pigment material can be a single pigment or it can be two or morepigments used in various ratios. In general, useful results are obtainedwhen the amount of pigment material contained within the layer is withinthe range of from about 0.01 to 90 weight percent, based on the dryweight of the layer. A very high pigment to binder ratio is preferred.Various solvents may be added to the composition during and after themilling procedure to facilitate pigment crystallization and to providedispersion stability and coatability as described in Molaire and KeadingU.S. Pat. Nos. 5,614,342 and 5,766,810, both incorporated herein byreference.

The ionization potential may be measured by methods described in theart, e.g., photoelectron spectroscopy. Alternatively, electrochemicalmethods may be used to measure the oxidation potential of the materialwhich can be related to the ionization potential by methods known in theart (see for example Loutfy, R. O.; Sharp, J. H. Photogr. Sci. Eng.(1976) 20, 165 and Reiss, H.; Heller, A. J. Phys. Chem. (1985), 89,4207).

Any p-type conducting polymer may be used. Preferred polymers are thosethat exhibit weak or no absorption of visible or near infrared light.Useful polymers in this class includes various pi-conjugated polymerssuch as the polythiophenes, poly(3-alkyl)thiophenes,polyisothianaphthene, polyethylenedioxythiohenes,poly-p-phenylenevinylenes, poly-(2,5 dialkoxy)-p-phenylenevinylenes,poly-p-phenylenes, polyheptadiynes, polyanilines, polypyrroles,polyfluorenes, poly(2-vinylpyridines), and the like as described forexample in Heeger, A. J., J. Phys Chem B (2001) 105, 8475-8491 and“Polymers for Photonics Applications I”, K. S. Lee ed, 1^(st) edition,Springer Verlag (2002). Also included are non-conjugated conductingpolymers, that is so called “redox polymers”, that compriseelectrochemically active components incorporated as main chain moietiesor as pendant moieties that are covalently linked to an insulatingbackbone. Examples of this class of pendant arylamine and main chainarylamine conducting polymers are structures I and II shown below asdescribed for example in Linberg et al. U.S. Pat. No. 5,155,200 and U.S.Pat. No. 5,030,532 and Facci et. al., Mol. Cryst. Liq. Cryst. (1991)194, pp 55-63.

wherein n, x, and s are intergers, and R is a substituted orunsubstituted alkyl, aryl, alkyloxy group or a halogen atom, or hydrogenatom.

Preferred polymers are those that exhibit only weak absorption ofvisible or near infrared electromagnetic radiation. Most preferred arepolymers that exhibit no absorption of visible or near infraredelectromagnetic radiation, i.e., are transparent.

The ionization potential may be measured by methods described in theart, e.g., photoelectron spectroscopy. Alternatively, electrochemicalmethods may be used to measure the oxidation potential of the materialas demonstrated by Li et al, Synthetic Metals (1999) 99, 243-248,incorporated herein by reference. Oxidation potentials measured byelectrochemical methods can be related to the ionization potential bymethods known in the art (see for example Loutfy, R. O.; Sharp, J. H.Photogr. Si. Eng. (1976) 20, 165 and Reiss, H.; Heller, A. J. Phys.Chem. (1985), 89, 4207).

Photosensitive n-type (electron acceptor) organic semiconductorcompositions that comprise nanometer-sized n-type (electron acceptor)organic semiconductor pigment crystals with an electron affinity EA thatare dispersed in an n-type (electron acceptor) electronically conductingpolymeric binder that has a similar electron affinity. In a preferredembodiment the electron affinities of the electron-acceptor pigment andelectron-acceptor conducting polymer differ by less than 0.5 eV. In amore preferred embodiment the electron affinities of the pigment andconducting polymer differ by less than 0.2 eV. In a most preferredembodiment the electron affinities of the pigment and conducting polymerdiffer by less than 0.1 eV.

Any n-type (electron acceptor) semiconducting pigment may be utilized.Most preferred are those that exhibit high absorption for visible andnear infrared radiation. Representative examples of n-typesemiconducting pigment include the aromatic imides derived from3,4,9,10-perylenetetracarboxylic dianhydride (PTDA), among others. Theclass of n-type (electron acceptor) pigment materials that is mostuseful in the aforementioned composition are the perylenediimides.

Preferred n-type semiconducting pigment materials are those that can beprepared or processed to form nanometer-sized crystals for dispersioninto the polymer. Preferred particle sizes are less than 0.5 micron inlength. More preferred particle sizes are less than 0.2 micron inlength. Preferred particle sizes are less than 0.1 micron in length.

Acceptable procedures for processing n-type semiconducting pigmentmaterials to form nanometer-sized crystal dispersions includedry-milling, salt-milling, acid-pasting, and solvent milling, amongothers. The optimum ratio of pigment material to conducting polymericbinder may vary widely depending upon the particular materials employed.The pigment material can be a single pigment or it can be two or morepigments used in various ratios. In general, useful results are obtainedwhen the amount of pigment material contained within the layer is withinthe range of from about 0.01 to 90 weight percent, based on the dryweight of the layer. A very high pigment to binder ratio is preferred.Various solvents may be added to the composition during and after themilling procedure to facilitate pigment crystallization and to providedispersion stability and coatability.

The electron affinity may be measured by methods described in the art,e.g., photoelectron spectroscopy. Alternatively, electrochemical methodsmay be used to measure the reduction potential of the material byelectrochemical methods as demonstrated by Li et al, Synthetic Metals(1999) 99, 243-248, incorporated herein by reference. Reductionpotentials measured by electrochemical methods can be related to theelectron affinity by methods known in the art. (see for example Loutfy,R. O.; Sharp, J. H. Photogr. Si. Eng. (1976) 20, 165).

Any n-type conducting polymer may be used. This includes electronaccepting conjugated polymers such as halogen substitutedpolyphenylenevinylenes like poly(cyanophenylenevinylene) III and thelike as described in Tillmann, H.; Horhold, H.-H. Synthetic Metals(1999), 101(1-3), 138-139, Vaschetto, M. E.; Springborg, M. SyntheticMetals (1999), 101(1-3), 502, Greenham, N. C.; Cacialli, F.; Bradley, D.D. C.; Friend, R. H.; Moratti, S. C.; Holmes, A. B. Materials ResearchSociety Symposium Proceedings (1994), 328(Electrical, Optical, andMagnetic Properties of Organic Solid State Materials), 351-60.

where p is an interger

Also included are non-conjugated conducting polymers, that is “redoxpolymers” that comprise electrochemically active components incorporatedas main chain moieties or as pendant moieties that are covalently linkedto an insulating backbone. Examples of this class of conducting polymersare described by Sorriero et al US 2003/0162109 and U.S. Pat. No.6,593,046, and by Mackinnon, S.; Wang, Z.; J. Poly. Sci. (2000), 38,3467-3475, and Wiederrecht, G.; Wasielewski, M. R. J. Am. Chem. Soc.(1998), 120 3231-3236, all incorporated herein by reference. An exampleof such polymers are acrylate polymers represented by general formula 1:

wherein m and n are integers and R is a substituted or unsubstitutedalkyl or aryl group. Another example is condensation polymers havingcovalently bonded as repeating units in the polymer chain, aromatictetracarbonylbisimide groups of the formula II and III

wherein Ar¹ and Ar₂ repectively represent tetravalent or trivalentaromatic groups of 6 to about 20 carbon atoms, and X is O, C(CF₃)₂, S═Oor SO2. Polymers II and III may be, for example, a polyester-co-imide asdescribed in Sorriero et al U.S. Pat. And Application No. 2003/0162109and U.S. Pat. No. 6,593,046, incorporated herein by reference.

Preferred polymers are those that exhibit only weak absorption ofvisible or near infrared electromagnetic radiation. Most preferred arepolymers that exhibit no absorption of visible or near infraredelectromagnetic radiation, i.e., are transparent.

Thin layers of the aforementioned organic semiconductor compositionsthat comprise nanometer-sized n-type or p-type organic semiconductorpigment crystals/conducting polymer may be formed by any method known inthe art, including roll coating and dip-coating, as described forexample in Organic Photoreceptors for Xerography, P. Borsengerger, D.Weiss, Marcel Dekker, New York (1998) pp 112-117, spin-coating, inkjet,and the like.

The p/n heterojunction is prepared by coating onto a rigid or flexiblesupport in succession a combination of the p-type (electron donor)photosensitive organic semiconductor pigment/polymer composition and then-type (electron acceptor) photosensitive organic semiconductorpigment/polymer compositions into bilayers or multilayers. In order toachieve a bilayer or multiplayer format it may be advantageous toutilize polymers and/or coating solvents such that extensive mixing ofthe p-type and n-type layers does not occur during the coating process.Alternatively, it may be advantageous to utilize curable polymers in thepreparation of the p-type and/or n-type pigment polymer composition,such that following the deposition of the first layer, said layer may becross-linked via application of heat or light so that during the processof coating the second layer intermixing of the layers is prevented.Alternatively the p/n heterojunction is prepared by first coating ontoone rigid or flexible support the p-type photosensitive organicsemiconductor pigment/polymer composition and coating the n-typephotosensitive organic semiconductor pigment/polymer composition onto asecond support, or vice versa, and subsequently laminating the twocoated supports together with heat or solvent vapor annealing.

A photovoltaic cell is prepared that has an active structure comprisinga bilayer of the p-type (electron donor) photosensitive organicsemiconductor pigment/polymer composition and the n-type (electronacceptor) photosensitive organic semiconductor pigment/polymercompositions wherein the two layers re in electrical contact with oneanother. The active structure also includes an electrically conductivecontact structure to the p-type layer and a second electricallyconductive contact to the n-type layer. At least one of the electricallyconductive contacts permits visible and near IR light to passtherethrough to the n- and p-type layers. Additional layers may beplaced between the n-type layer and its electrically conducting contactand/or between the p-type layer and its electrically conducting contactto provide ohmic contact.

The following examples are provided to illustrate the invention.

EXAMPLE 1

An n-type (electron acceptor) semiconductor composition of a stabledispersion of nanoparticle semiconductor pigment in a solvent solutionof an electronically conducting polymer was prepared using thesemiconductor pigment material 3,4,9,10-perylenetetracarboxylicdianhydride compound denoted as UD-1 (structure below). The pigment is aperylene diimide useful in the preparation of photodiodes forphotovoltaics and other optoelectronic applications. The pigment wasmilled to a small particle size and dispersed in the n-typeelectronically conducting polymer derived from1,4,5,8-naphthalenetetracarboxylic dianhydride. The electrochemicalreduction potential of the naphthimide containing polymer NB-2 issimilar, that is within 0.2 V, of the reduction potential of a perylenediimide material.

The conducting polymer NB-2 is comprised of the following componentparts: 12.5% DDA, 15% NX62, 2.5% AB, 5% EO2EA, 5% NB3, 30% NX3, and 30%NB10.

The electronically conducting polymer used herein are described in USpatent application publication US2003/0162109 A1 Aug. 28, 2003,incorporated herein by reference. This reference also shows the cyclicvoltammetry (reproduced in FIG. 1) at a carbon electrode for the polymerdissolved in 3:1 dichloromethane:methanol containing 0.1 Mtetrabutylammoniumtetrafluoroborate supporting electrolyte indicating areversible reduction process at ca.-0.55V vs SCE.

The reduction potential for the perylene diimide pigment has not beendirectly measured due to its insolubility. However, reduction potentialsfor other closely related perylenediimides have been reported. Thereduction potentials for perylenediimides are typically −0.5 V to −0.6 Vvs SCE (J. Amer. Chem. Soc., (1999) vol 121 (14) pp 3515, incorporatedherein by reference. Thus the reduction potentials for the pigmentparticle and the conducting polymer binder are within 0.1 V of eachother, that is they are nominally equivalent. The pigment UD-1 wasprepared by published standard procedures for synthesizingperylenediimide materials and purified by vacuum sublimation at 460° C.A ball mill (800 ml glass) was charged with 304 g of ⅛ inch chrome steelbeads and 2.0 g of UD-1. The mixture was sheared by milling at about 68rpm for 14 days at a temperature of 21 C. The resulting pigment wasextracted from the beads with water and then dried in an oven at 60 C.The milled pigment from the first stage was transferred to an attritormilling vessel containing a plastic 50 ml conical tube and a stainlesssteel stirrer. The stirrer consisted of a rotating shaft with 18 smallside arms aligned in 4 rows along the lower part of the shaft at 90degrees to each other and extending perpendicular from the shaft towardthe side wall of the vessel. Added to the tube was 46 g of 1/16 inchstainless steel beads and 10 mls of a mixture of UD-1 (5% by wgt), NB-2(6% by wgt) and solvent (98% by wgt) of 3:1 of1,1,2-trichloroethane/2-propanol. The mixture was agitated at 2200 rpmfor 8 hours with periodic solvent addition to compensate for minorevaporation.

8 ml of the dispersion were removed from the milling vessel (leavingabout 2 ml of dispersion) and 9 ml of 3:1 of1,1,2-trichloroethane/2-propanol mixture was added along with 63 g ofadditional beads and this mixture was further milled at 2200 rpm for 16hrs. A sample of this final 6% dispersion was further diluted inNB-2/mixed solvent solution and subjected to particle size analysisusing a Microtrac Model UPA-150 ultrafine particle analyzer. Theparticle sizing data in FIG. 2 show a primary population median at 0.026um with the remainder of the distribution fairly evenly split betweensize populations of 0.05 to 0.1 um and 0.1 to 0.2 um.

Thin films of the final dispersion were prepared by spin coating using aHeadway PWM 32 model spin coater onto pre-cleaned 50 mm×50 mm glassslides. Various rotation speeds were utilized to provide samples ofvarious film thicknesses. UV-vis absorption spectra are measured for thecoated slides using a HP8450A diode array spectrophotometer and areillustrated in FIG. 3. The absorbance in the spectral region of 400 nmto 650 nm is due to the light absorption by the UD-1 pigment material.Spectral absorption due to the naphthimide conducting polymer NB-2 isconfined to wavelengths under about 400 nm. Film thickness was measuredon a Tencor P-10 Surface Profilometer.

The following data Table 3 lists the rotation speed (rpm) forpreparation of the spin coating, the thickness of the deposited layer(in micron μm), and the Absorbance (optical density OD) measured at 578nm. The data show that the coated dispersion exhibits a high degree oflight absorption in the visible spectral region at minimal filmthickness. TABLE 3 Spin coating thickness Absorbance Sample rotationspeed (rpm) (in micron μm) (optical density OD) Blue 8000 0.145 0.67Purple 4000 0.180 0.92 Green 2000 0.286 1.38 Red 1000 0.425 2.01 blank2000

The results demonstrate the preparation of a photosensitive n-type(electron acceptor) organic semiconductor composition that comprisesnanometer-sized n-type (electron acceptor) organic semiconductor pigmentcrystals dispersed in an n-type (electron acceptor) electronicallyconducting polymeric binder wherein the electron affinities of thepigment and polymer as measured by their respective electrochemicalreduction potentials are within 0.2 V. The results also show that thinfilms of varying thickness of the n-type (electron acceptor) organicsemiconductor dispersion can be conveniently cast onto a solidsubstrate. The results also show that the thin films exhibit strongabsorption of visible electromagnetic radiation and hence are suitablefor use as photosensitive n-type (electron acceptor) organicsemiconductor compositions for preparing p/n heterojunctions for use inoptoelectronic devices such as photodiodes, photodetectors, andphotovoltaic (solar cells) cells.

EXAMPLE 2

A ball mill (1 gal glass) was charged with 9000 g of ⅛ inch chrome steelbeads and 75.0 g of titanium,oxo(29H,31H-phthalocyaninato(2-)-.kappa.N29,.kappa.N30,.kappa.N31,.kappa.N32)-,(SP-5-12)-[C₃₂H₁₆N₈ O Ti] “TiOPc” containing 1.3 wt % chlorine impurity.The mixture was sheared by milling at about 110 rpm for 7 days at roomtemperature (about 23° C.). A sample of the resulting pigment wasextracted from the beads with water and then dried over night undervacuum at room temperature. 5970 g of the milled pigment with beads wastransferred to a 250 ml glass jar, 1305 g of dichloromethane (DCM) wasadded and the mixture was milled another 24 hours at 117 rpm at roomtemperature. After this second milling, the pigment/DCM slurry wasdecanted into a clean 1 gal glass jar. The beads were rinsed 3 timeswith fresh DCM, and the resulting pigment/DCM was also added to the 1gal glass jar. The pigment was filtered through a 350 ml medium glassfrit under water stream vacuum. The resulting sludge was transferred topetri dishes and dried under vacuum over night at room temperature. Thedried pigment was analyzed by XRD and found to be highly crystalline ofTiOPc Type V.

To prepare the pigment binder slurry for coating, an attritor millingvessel containing a plastic 50 ml conical tube and a stainless steelstirrer were used. The stirrer consisted of a rotating shaft with 18small side arms aligned in 4 rows along the lower part of the shaft at90 degrees to each other and extending perpendicular from the shafttoward the side wall of the vessel. Added to the tube were 40 g of 0.2mm YSZ beads (Yttria Stabilized Zirconium Oxide), 0.88 g of the milledTiOPc, and 0.22 g of the tri-tolylamine polymer TI [Mw=80,800] dissolvedin 12 ml toluene. The polymer was dissolved in the toluene over nightunder stirring at room temperature and filtered through a 1 micronfilter. The mixture was agitated at 2200 rpm for 6 hours.

After the 6 hours of wet milling, the plastic tube containing the slurrywas removed from the attritor, slurry adhering to the upper walls of thetube was carefully removed, the amount of remaining slurry in the tubedetermined by weight and enough fresh toluene added to the slurry toresult in a 5% total solids concentration of pigment and binder intoluene. After mixing the toluene and slurry by vigorous shaking, theYSZ beads were allowed to settle for 10 minutes and the supernate wascarefully removed by pipette. The pigment dispersion (supernate) wassonicated for 1 hour in ice water prior to coating.

Thin films of the final dispersion were prepared by spin coating using aHeadway PWM 32 model spin coater onto pre-cleaned 50 mm×50 mm glassslides. Various rotation speeds were utilized to provide samples of filmthicknesses of 0.076, 0.114, and 0.347 micron. UV-vis absorption spectrameasured for the 0.347 micron thick coated slide using a Cary 5EUV-vis-NIR spectrophotometer and are illustrated in FIG. 4. Theabsorbance in the spectral region of 500 nm to 900 nm is due to thelight absorption by the TiOPc pigment material. Spectral absorption dueto the tri-tolylamine polymer is confined to wavelengths under about 400nm. The peak absorbance for TiOpc (827 nm+/−2 nm) is 0.45, 0.57, and1.58 for film thickness of 0.076, 0.114, and 0.347 micron, respectively.Film thickness was measured on a Tencor P-10 Surface Profilometer.

Particle size of the TiOPc pigments was estimated based on TransmissionElectron Microscopy (TEM) micrographs according to a procedure known tothose versed in the art. TEM micrographs were obtained by spin coatingthe aforementioned dispersion onto glass slides, which were pre-coatedwith a formvar polymer coating. By dipping of these double-coated slidesinto water, the formvar/dispersion coating could be stripped off theslide and taken up from the water surface onto a copper TEM grid,without wetting of the dispersion coating. Analysis of such TEMmicrographs suggests a primary pigment particle size between 30 and 70nm, with occasional particles of 120 nm or larger. Literature dataindicate the ionization potential of the metal phthalocyanine to bewithin 0.2 eV of that of the active redox component (p-tritolylamine) ofthe polymer.

The data show that the coated dispersion exhibits a high degree of lightabsorption in the visible spectral region at minimal film thickness. Theresults demonstrate the preparation of a photosensitive p-type (electrondonating) organic semiconductor composition that comprisesnanometer-sized p-type (electron donor) organic semiconductor pigmentcrystals dispersed in an p-type (electron donor) electronicallyconducting polymeric binder wherein the ionization potentials of thepigment and polymer are estimated to be within 0.2 V. The results alsoshow that thin films of varying thickness of the p-type (electron donor)organic semiconductor dispersion can be conveniently cast onto a solidsubstrate. The results also show that the thin films exhibit strongabsorption of visible and near infrared electromagnetic radiation andhence are suitable for use as photosensitive p-type (electron donor)organic semiconductor compositions for preparing p/n heterojunctions foruse in optoelectronic devices such as photodiodes, photodetectors, andphotovoltaic (solar cells) cells.

EXAMPLE 3

A photovoltaic cell is prepared by first spin coating a 100 nm thicklayer of the p-type TiOpc semiconductor crystal pigment/conductingpolymer dispersion described in Example 1 onto a transparent flexible(plastic) support bearing a thin film of indium tin oxide transparentconductor (8 ohm/sq). On a second piece of transparent flexible(plastic) support bearing a thin film of indium tin oxide transparentconductor is coated a 100 nm thick layer of the n-type UD-1semiconductor crystal pigment/conducting polymer dispersion described inexample 3. Each of the coated layers is gently heated under vacuum toremove residual solvent. The two plastic supports thusly coated anddried are pressed together via lamination using a heated rollerassembly, with the two plastic supports remaining slightly offset duringlamination to allow for electrical connections. The temperature of therollers is adjusted to a few degrees above the glass transitiontemperature of the polymers. Electrical connections to the cell are madeby contact to the exposed, offset areas of the laminated cell.

EXAMPLE 4

A ball mill (1 gal glass) was charged with 9000 g of ⅛ inch chrome steelbeads and 75.0 g of TiOPc containing 1.3 wt % chlorine impurity. Themixture was sheared by milling at about 110 rpm for 7 days at roomtemperature (about 23° C.). A sample of the resulting pigment wasextracted from the beads with water and then dried over night undervacuum at room temperature. 5970 g of the milled pigment with beads wastransferred to a 250 ml glass jar, 1305 g of dichloromethane (DCM) wasadded and the mixture was milled another 24 hours at 117 rpm at roomtemperature. After this second milling, the pigment/DCM slurry wasdecanted into a clean 1 gal glass jar. The beads were rinsed 3 timeswith fresh DCM, and the resulting pigment/DCM was also added to the 1gal glass jar. The pigment was filtered through a 350 ml medium glassfrit under water stream vacuum. The resulting sludge was transferred topetri dishes and dried under vacuum over night at room temperature. Thedried pigment was analyzed by XRD and found to be highly crystalline ofTiOPc Type V.

To prepare the pigment binder slurry for coating, an attritor millingvessel containing a plastic 50 ml conical tube and a stainless steelstirrer were used. The stirrer consisted of a rotating shaft with 18small side arms aligned in 4 rows along the lower part of the shaft at90 degrees to each other and extending perpendicular from the shafttoward the side wall of the vessel. Added to the tube were 46 g of 1.6mm chrome steel beads, 0.88 g of the milled TiOPc, and 0.22 g of apolyfluorene-arylamine conjugated copolymer P1 [Mw=18,500] dissolved in12 ml toluene. The polymer was dissolved in the toluene over night understirring at room temperature and filtered through a 1 micron filter. Themixture was agitated at 1500 rpm for 3 hours. After the 3 hours of wetmilling, the plastic tube containing the slurry was removed from theattritor, slurry adhering to the upper walls of the tube was carefullyremoved, the amount of remaining slurry in the tube determined by weightand enough fresh toluene added to the slurry to result in a 5% totalsolids concentration of pigment and binder in toluene. After mixing thetoluene and slurry by vigorous shaking, the dispersion was separatedfrom the beads through aspiration. Particle size of the TiOPc pigmentswas estimated based on Scanning Electron Microscopy (SEM) micrographsaccording to a procedure known to those versed in the art. SEMmicrographs were obtained by spin coating the aforementioned dispersiononto a silicon wafer, which served as the sample holder during the SEMmeasurement. Analysis of such SEM micrographs suggests a primary pigmentparticle size between 30 and 100 nm, with occasional particles of 200 nmor larger.

Thin films of the final dispersion were prepared by spin coating using aHeadway PWM 32 model spin coater onto precleaned 50 mm×50 mm glassslides. Various rotation speeds were utilized to provide samples ofvarious film thicknesses. UV-vis absorption spectra are measured for thecoated slides using a Cary 5E UV-vis-NIR spectrophotometer. The spectrashow absorbance in the spectral region of 500 nm to 900 nm that is dueto the light absorption by the TiOPc pigment material. Spectralabsorption due to polyfluorene-arylamine copolymer is confined towavelengths under about 400 nm. Film thickness was measured on a TencorP-10 Surface Profilometer. Literature data indicate the ionizationpotential of the metal phthalocyanine to be within 0.3 eV of that of thepolyfluorene-arylamine copolymer.

The following data Table 4 lists the thickness of the spin-coated layer(in micron mm), and the Absorbance (optical density OD) measured at theabsorbance maximum (840-850 nm). The data show that the coateddispersion exhibits a high degree of light absorption in the NIR andvisible spectral regions at minimal film thickness. TABLE 4 thicknessAbsorbance Sample (in micron μm) (optical density OD) 1 0.104 0.45 20.113 0.62 3 0.193 0.98 4 0.358 1.66

The results demonstrate the preparation of a photosensitive p-type(electron donating) organic semiconductor composition that comprisesnanometer-donor) sized p-type (electron donor) organic semiconductorpigment crystals dispersed in a p-type (electron donor) electronicallyconducting conjugated polymer binder wherein the ionization potentialsof the pigment and polymer are nominally equivalent. The results alsoshow that thin films of varying thickness of the p-type (electron donor)organic semiconductor dispersion can be conveniently cast onto a solidsubstrate. The results also show that the thin films exhibit strongabsorption of visible and neat infrared electromagnetic radiation andhence are suitable for use photosensitive p-type (electron donor)organic semiconductor compostions for preparing p/n heterojunctions foruse in optoelectronic devices such as photodiodes, photodetectors, andphotovoltaic (solar cells) cells.

The invention has been described in detail with particular reference tocertain preferred embodiments thereof but it will be understood thatvariations and modifications can be effected within the spirit and scopeof the invention.

1. A photosensitive organic semiconductor composition comprising atleast one organic p-type (electron donor) semiconductor pigment with atleast one p-type (electron donor) conducting polymer, wherein theionization potential of said at least one organic p-type (electrondonor) semiconductor pigment and the ionization potential of said atleast one p-type (electron donor) conducting polymer are nominallyequivalent.
 2. The photosensitive organic semiconductor composition ofclaim 1 wherein said ionization potentials of said at least one organicp-type (electron donor) semiconductor pigment and the ionizationpotential of said at least one p-type (electron donor) conductingpolymer differ by less than 0.5 V.
 3. The photosensitive organicsemiconductor composition of claim 1 wherein said at least one organicp-type (electron donor) semiconductor pigment exhibits high absorptionfor visible and near infrared radiation.
 4. The photosensitive organicsemiconductor composition of claim 1 wherein said at least one organicp-type (electron donor) semiconductor pigment forms nanometer-sizedcrystals.
 5. The photosensitive organic semiconductor composition ofclaim 1 wherein said at least one organic p-type (electron donor)semiconductor pigment has a particle sizes of less than 0.5 micron inlength.
 6. The photosensitive organic semiconductor composition of claim1 wherein said at least one organic p-type (electron donor)semiconductor pigment comprises from 0.01 to 90 weight percent, based onthe dry weight of the layer comprising said pigment.
 7. Thephotosensitive organic semiconductor composition of claim 1 wherein saidat least one organic p-type (electron donor) semiconductor pigment is atleast one member selected from the group consisting of substituted andunsubstituted metal-free phthalocyanines, substituted and unsubstitutedmetallophthalocyanines, and porphyrins.
 8. The photosensitive organicsemiconductor composition of claim 1 wherein said at least one organicsemiconductor pigment is a metallophthalocyanine.
 9. The photosensitiveorganic semiconductor composition of claim 1 wherein said at least oneconducting polymer exhibits weak or no absorption of visible or nearinfrared light.
 10. The photosensitive organic semiconductor compositionof claim 1 wherein said at least one conducting polymer is a conjugatedpolymer or a non-conjugated conducting polymer.
 11. The photosensitiveorganic semiconductor composition of claim 1 wherein said at least oneconducting polymer is at least one member selected from the groupconsisting of polythiophenes, paraphenylvinylenes, polyanilines, andpolypyrolles.
 12. The photosensitive organic semiconductor compositionof claim 1 wherein said at least one organic semiconductor pigment is ann-type (electron donor) organic semiconductor pigment and said at leastone conducting polymer is an n-type (electron donor) electronicallyconducting polymeric binder.
 13. The photosensitive organicsemiconductor composition of claim 1 further comprising solvent.
 14. Aphotosensitive organic semiconductor composition comprising at least oneorganic n-type (electron donor) semiconductor pigment with at least onen-type (electron donor) conducting polymer, wherein the electronaffinity of said at least one organic n-type (electron donor)semiconductor pigment and the electron affinity of said at least onen-type (electron donor) conducting polymer are nominally equivalent. 15.The photosensitive organic semiconductor composition of claim 1 whereinsaid electron affinity of said at least one organic n-type (electrondonor) semiconductor pigment and the electron affinity of said at leastone n-type (electron donor) conducting polymer differ by less than 0.5V.
 16. The photosensitive organic semiconductor composition of claim 1wherein said at least one organic n-type (electron donor) semiconductorpigment exhibits high absorption for visible and near infraredradiation.
 17. The photosensitive organic semiconductor composition ofclaim 1 wherein said at least one organic n-type (electron donor)semiconductor pigment forms nanometer-sized crystals.
 18. Thephotosensitive organic semiconductor composition of claim 1 wherein saidat least one organic n-type (electron donor) semiconductor pigment has aparticle sizes of less than 0.5 micron in length.
 19. The photosensitiveorganic semiconductor composition of claim 1 wherein said at least oneorganic n-type (electron donor) semiconductor pigment comprises from0.01 to 90 weight percent, based on the dry weight of the layercomprising said pigment.
 20. The photosensitive organic semiconductorcomposition of claim 14 wherein said at least one organic n-type(electron donor) semiconductor pigment is an aromatic imide derived from3,4,9,10-perylenetetracarboxylic dianhydride (PTDA).
 21. Thephotosensitive organic semiconductor composition of claim 14 whereinsaid at least one organic n-type (electron donor) semiconductor pigmentis a perylenediimide.
 22. The photosensitive organic semiconductorcomposition of claim 14 wherein said at least one n-type (electrondonor) conducting polymer exhibits weak or no absorption of visible ornear infrared light.
 23. The photosensitive organic semiconductorcomposition of claim 14 wherein said at least one n-type (electrondonor) conducting polymer is a conjugated polymer or a non-conjugatedconducting polymer.
 24. The photosensitive organic semiconductorcomposition of claim 14 wherein said at least one n-type (electrondonor) conducting polymer is poly(cyanophenylenevinylene).
 25. Thephotosensitive organic semiconductor composition of claim 14 furthercomprising solvent.
 26. A p/n heterojunction comprising a combination ofat least one layer comprising p-type organic semiconductor pigment withat least one p-type conducting polymer, wherein the ionization potentialof said at least one p-type organic semiconductor pigment and theionization potential of said at least one p-type conducting polymer arenominally equivalent and at least one layer comprising at least onen-type organic semiconductor pigment with at least one n-type conductingpolymer, wherein the electron affinity of said at least one n-typeorganic semiconductor pigment and the electron affinity of said at leastone n-type conducting polymer are nominally equivalent.
 27. The p/nheterojunction of claim 26 further comprising a support.
 28. Thephotosensitive organic semiconductor composition of claim 1 wherein saidionization potentials of said at least one organic p-type (electrondonor) semiconductor pigment and the ionization potential of said atleast one p-type (electron donor) conducting polymer differ by less than0.2 eV.
 29. The photosensitive organic semiconductor composition ofclaim 1 wherein said ionization potentials of said at least one organicp-type (electron donor) semiconductor pigment and the ionizationpotential of said at least one p-type (electron donor) conductingpolymer differ by less than 0.1 eV.
 30. The photosensitive organicsemiconductor composition of claim 1 wherein said at least one organicp-type (electron donor) semiconductor pigment has a particle sizes ofless than 0.2 micron in length.
 31. The photosensitive organicsemiconductor composition of claim 1 wherein said at least one organicp-type (electron donor) semiconductor pigment has a particle sizes ofless than 0.1 micron in length.
 32. The photosensitive organicsemiconductor composition of claim 1 wherein said at least oneconducting polymer is a non-conjugated conducting polymer containingpendant arylamine groups.
 33. The photosensitive organic semiconductorcomposition of claim 1 wherein said electron affinity of said at leastone organic n-type (electron donor) semiconductor pigment and theelectron affinity of said at least one n-type (electron donor)conducting polymer differ by less than 0.2 eV.
 34. The photosensitiveorganic semiconductor composition of claim 1 wherein said electronaffinity of said at least one organic n-type (electron donor)semiconductor pigment and the electron affinity of said at least onen-type (electron donor) conducting polymer differ by less than 0.1 eV.35. The photosensitive organic semiconductor composition of claim 1wherein said at least one organic n-type (electron donor) semiconductorpigment has a particle sizes of less than 0.2 micron in length.
 36. Thephotosensitive organic semiconductor composition of claim 1 wherein saidat least one organic n-type (electron donor) semiconductor pigment has aparticle sizes of less than 0.1 micron in length.
 37. The photosensitiveorganic semiconductor composition of claim 14 wherein said at least onen-type (electron donor) conducting polymer is a non-conjugatedconducting polymer containing pendant groups of an aromatic imidederived from 1,4,5,8-naphthalenetetracarboxylic dianhydride.